Chanzon BF998 SOT-143 N-Channel JFET FET Junction Field-Effect Transistor, Dual-Gate MOS-FET for VHF/UHF and High-Frequency Amplification(Pack of 10pcs)

Product Description: The BF998/BF998R/BF998RW is an N-Channel Dual Gate MOS-Fieldeffect Tetrode in Depletion Mode, designed for high-performance applications such as input and mixer stages in UHF tuners. This electrostatically sensitive device features integrated gate protection diodes for enhanced reliability. Key Features: Low Noise Figure for superior signal clarity Low Feedback and Input Capacitance for improved signal integrity High Cross Modulation Performance for stable operation under varying conditions High AGC-range and Gain for flexibility in signal processing Absolute Maximum Ratings: Drain-source voltage: 12V Drain current: 30mA Gate-source peak current: ±10mA Total power dissipation at Tamb ? 60°C: 200mW Channel temperature: 150°C Storage temperature range: –65 to +150°C Electrical Characteristics: Drain-source breakdown voltage (V(BR)DS): 12V Gate-source leakage current: ±50nA Drain current (IDSS): 4-18mA depending on model variant AC Characteristics: Forward transadmittance (|y21s|): 21-24 mS Gate input capacitance (Cissg1/Cissg2): 1.1-2.5 pF Feedback and output capacitance: 25fF and 1.05pF respectively Power gain (Gps): Up to 28dB at 200MHz AGC range: 40dB at 800MHz Noise figure (F): 1.0-1.5dB Typical Characteristics: Graphs provided illustrate total power dissipation vs. ambient temperature, drain current vs. drain-source voltage, and various other performance metrics. Dimensions: Available in SOT 143, SOT 143R, and SOT 343R packages with respective dimensions detailed in the datasheet. Designed for precision and reliability, the BF998 series is a top choice for demanding UHF applications requiring high performance and robustness.